Semiconductor devices and methods for generating light

Details Semiconductor devices and methods for generating light Semiconductor devices and methods for generating light

2011-04-19

2011-04-19

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046010

Reexamination Certificate

active

07929588

ABSTRACT:
Semiconductor devices and a method for generating light in a semiconductor device are invented and disclosed. The method includes the steps of forming a vertical cavity surface emitting laser including an active region and an oxide layer, the active region separated from the oxide layer and configured to generate light in response to an injected current and introducing an implant layer adjacent and underneath the oxide layer to confine the injected current to a region of the device where charge carriers are combining to generate light. The semiconductor devices include an implant layer between the oxide layer and the active region. The implant layer prevents lateral leakage current from exiting a region of the device where charge carriers are combining to generate light.

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Liu, Yang et al., Effects of the Spatial Nonuniformity of Optical Transverse Modes on the Modulation Response of Vertical-Cavity Surface-Emitting Lasers, I.E.E.E. Journal of Quantum ELectronics, vol. 39, No. 1, Jan. 2003, pp. 99-108.

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