Semiconductor devices and methods

Coherent light generators – Particular active media – Semiconductor

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372 49, H01S 319

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active

055815715

ABSTRACT:
A semiconductor laser device includes, in a disclosed embodiment: a semiconductor active region disposed between upper and lower confining regions of opposite type semiconductor material; reflective facets at opposing edges of the active and confining regions; at least one of the confining regions including a layer of relatively high aluminum fraction aluminum-bearing III-V material between layers of relatively low aluminum fraction aluminum bearing III-V material, the layer of relatively high aluminum fraction material having, at its edges and adjacent the facets, spikes of native oxide of aluminum; and electrodes for applying electric potential across the upper and lower confining regions.

REFERENCES:
patent: 4172906 (1979-10-01), Pancholy
patent: 4176206 (1979-11-01), Inoue
patent: 4291327 (1981-09-01), Tsang
patent: 4378255 (1983-03-01), Holonyak, Jr. et al.
patent: 4511408 (1985-04-01), Holonyak, Jr.
patent: 4563368 (1986-01-01), Tihanyi et al.
patent: 4639275 (1987-01-01), Holonyak, Jr.
patent: 4817103 (1989-03-01), Holonyak, Jr. et al.
patent: 5031186 (1991-07-01), Takigawa et al.
patent: 5262360 (1993-11-01), Holonyak, Jr. et al.
patent: 5284798 (1994-02-01), Ibuka et al.
patent: 5373522 (1994-12-01), Holonyak, Jr. et al.
patent: 5400354 (1995-03-01), Ludowise et al.
patent: 5403775 (1995-04-01), Holonyak, Jr. et al.
patent: 5425043 (1995-06-01), Holonyak, Jr. et al.
J. M. Dallesasse, N. Holonyak, Jr., A. R. Sugg, T. A. Richard, & N. El-Zein, "Hydrolization Oxidation Of Al.sub.x Ga.sub.1-x As-AlAs-GaAs Quantum Well Heterostructures And Superlattices", Appl. Phys. Lett. 57, 2844, Dec. 24, 1990.
J. M. Dallesasse & N. Holonyak, Jr., "Native-Oxide Stripe-Geometry Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Heterostructure Lasers", Appl. Phys. Lett. 58, 394, Jan. 28, 1991.
J. M. Dallesasse, N. Holonyak, Jr., D. C. Hall, N. El-Zein A. R. Sugg, S. C. Smith, & R. D. Burnham, "Native-Oxide-Defined Coupled-Stripe Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Heterostructure Lasers", Appl. Phys. Lett. 58, 834, Feb. 25, 1991.
A. R. Sugg, N. Holonyak, Jr., J. E. Baker, F. A. Kish, & J. M. Dallesasse, "Native Oxide Stabilization of AlAs-GaAs Heterostructures", Appl. Phys. Lett. 58, 1199, Mar. 18, 1991.
F. A. Kish, S. J. Caracci, N. Holonyak Jr., J. M. Dallesasse, A. R. Sugg, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, & M. G. Craford, "Native-Oxide Stripe-Geometry In.sub.0.5 (Al.sub.x Ga.sub.1-x).sub.0.5 P-In.sub.0.5 Ga.sub.0.5 P Heterostructure Laser Diodes", Appl. Phys. Lett. 59, 354, Jul. 15, 1991.
N. El-Zein, N. Holonyak, Jr., F. A. Kish, A. R. Sugg, T. A. Richard, J. M. Dallesasse, S. C. Smith, & R. D. Burnham, "Native-Oxide-Masked Si Impurity-Induced Layer Disordering Of Al.sub.x Ga.sub.1-x As-Al.sub.y Ga.sub.1-y As-Al.sub.z Ga.sub.1-z As Quantum-Well Heterostructures", J. Appl. Phys. 70, 2031, Aug. 15, 1991.
F. A. Kish, S. J. Caracci, N. Holonyak, Jr., J. M. Dallesasse, K. C. Hsieh, M. J. Ries, S. C. Smith, & R. D. Burnham, "Planar Native-Oxide Index-Guided Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Heterostructure Lasers", Appl. Phys. Lett. 59, 1755, Sep. 30, 1991.
N. El-Zein, F. A. Kish, N. Holonyak, Jr., A. R. Sugg, M. J. Ries, S. C. Smith, J. M. Dallesasse, and R. D. Burnham, "Native-Oxide Coupled-Cavity Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Heterostructure Laser Diodes", Appl. Phys. Lett. 59, 2838, Nov. 25, 1991.
F. A. Kish, S. J. Caracci, N. Holonyak, Jr., and S. A. Maranowski, J. M. Dallesasse, R. D. Burnham, and S. C. Smith, "Visible Spectrum Native-Oxide Coupled-Stripe In.sub.0.5 (Al.sub.x Ga.sub.1-x).sub.0.5 P-In.sub.0.5 Ga.sub.0.5 P Quantum Well Heterostructure Laser Arrays", Appl. Phys. Lett. 59 2883, Nov. 25, 1991.
F. A. Kish, S. J. Caracci, N. Holonyak, Jr., P. Gavrilovic, K. Meehan, & J. E. Williams, "Coupled-Stripe In-Phase Operation Of Planar Native-Oxide Index-Guided Al.sub.y Ga.sub.1-y As-GaAs-In.sub.x Ga.sub.1-x As Quantum-Well Heterostructure Laser Arrays", Appl. Phys. Lett. 60, 71, Jan. 6, 1992.
F. A. Kish, S. J. Caracci, S. A. Maranowski, N. Holonyak, Jr., K. C. Hsieh, C. P. Kuo, R. M. Fletcher, T. D. Osentowski, & M. G. Craford, "Planar Native-Oxide Buried-Mesa Al.sub.x Ga.sub.1-x As-In.sub.0.5 (Al.sub.y Ga.sub.1-y).sub.0.5 P-In.sub.0.5 (Al.sub.z Ga.sub.1-z).sub.0.5 P Visible-Spectrum Laser Diodes", J. Appl. Phys. 71, 2521, Mar. 15, 1992.
M. J. Ludowise, "Metalorganic Chemical Vapor Deposition Of III-V Semiconductors", J. Appl. Phys., 58, R31 1985.
G. E. Smith, "Phase Matching In Four-Layer Optical Waveguides", IEEE J. Quantum Electron., QE-4, 288 (1968).
E. Marcatelli, "Bends In Optical Dielectric Guides", Bell Syst. Tech. J. 48, 2103, 1969.
P. Sansonetti et al., "Low-Threshold GaAs/GaAlAs Buried Heterostructure Laser With An Ion-Beam Etched Laser With An Ion-Beam-Etched Quarter Ring Cavity", Electron Lett. 23, 485 (1987).
J. Butler et al., "Coupled-Mode Analysis Of Phase-Locked Injection Laser Arrays", Appl. Phys. Lett., 44, 293, 1984.
L. J. Guido, W. E Plano, G. S. Jackson, N. Holonyak, Jr., R. D. Burnham, & J. E. Epler, "Coupled-Stripe Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Lasers Defined By Vacancy-Enhanced Impurity-Induced Layer Disordering From (Si.sub.2).sub.y (GaAs).sub.1-y Barriers", Appl. Phys. Lett. 50, 757 (1987).
J. S. Major, Jr., D. C. Hall, L. J. Guido, N. Holonyak Jr., P. Gavrilovic, K. Meehan, J. E. Williams, & W. Stutius, "High-Power Disorder-Defined Coupled Stripe Al.sub.y Ga.sub.1-y As-GaAs-In.sub.x Ga.sub.1-x As Quantum Well Heterostructure Lasers", Appl. Phys. Lett. 55, 271 (1989).
J. Carran et al., "GaAs Lasers Utilizing Light Propagation Along Curved Junctions", IEEE J. Quantum Electron. QE-6 367 (1970).
A. S. H Liao et al., "Semiconductor Injection Lasers With a Circular Resonator", Appl. Phys. Lett. 36, 801 (1980).
D. G. Deppe, G. S. Jackson, N. Holonyak, Jr., R. D. Burnham, & R. L. Thorton, "Coupled Stripe Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Lasers Defined By Impurity-Induced (Si) Layer Disordering", Appl. Phys. Lett. 50, 632 (1987).
R. D. Dupuis et al., Proceedings of the International Symposium on GaAs and Related Compounds, "Preparation And Properties Of Ga.sub.1-x Al.sub.x As-GaAs Heterojunctions Grown By Metallorganic Chemical Vapour Deposition", pp. 1-9, Inst. of Physics, London, 1979.
F. A. Kish, S. J. Caracci, S. A. Maranowski, N. Holonyak, Jr., S. C. Smith, & R. D. Burnham, "Planar native-oxide Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Heterostructure Ring Laser Diodes", Appl. Phys. Lett. 60, 1582 (1992).
Nathan et al., "GaAs Injection Laser With Novel Mode Control and Switching Properties", J. Appl. Phys. Lett. 36, 473 (1964).
N. K. Dutta et al., "Bistability in Coupled Cavity Semiconductor Lasers", Appl. Phys. Lett. 44, 30 (1984).
N. Yamada et al., "Strained InGaAs/GaAs Single Quantum Well Lasers With Saturable Absorbers fabricated By Quantum Well Intermixing", Appl. Phys. Lett. 60, 2463 (1992).
C. Harder et al., "Bistability And Pulsations In Semiconductor Lasers With Inhomogeneous Current Injection", IEEE J. of Quantum Electronics, vol. Qe-18, 1335 (1982).
D. G. Deppe et al., "Bistability In An AlAs-GaAs-InGaAs Vetical-Cavity Surface-Emitting Laser", Appl. Phys. Lett. 58, 2616 (1991).
K. Aiki et al., "Lasing Characteristics Of Disturbed-Feedback GaAs-GaAlAs Diode Lasers With Separate Optical And Carrier Confinement", IEEE J. of Quantum Electronics, vol. Qe-12, 597 (1976).
J. Jewell, "Surface-Emitting Lasers Reach R&D Threshold", Laser Focus World, May 1990, pp. 151-155.
D. R. Scifres, R. D. Burnham, & W. Streifer, Appl. Phys. Lett. 25, 203 (1974).
W. T. Tsang, "Lightwave Communications Technology, Part B, Semiconductor Injection Lasers, I", edited by W. T. Tsang in Semiconductors and Semimetals, vol. 22, edited by R. K. Willardson and A. C. Beer (Academic, Orlando, 1985), Chap. 5, pp. 257-373.
M. Kitamura, M. Yamaguchi, S. Murata, I. Mito, & K. Kobayashi, Electron. Lett. 20, 595 (1984).
D. G. Deppe, D. C. Hall, N. Holonyak, Jr., R. J. Mayti, H. Schichijo, & J. E. Epler, Appl. Phys. Lett. 53, 874 (1988).
H. G. Winful, J. H. Marburger, & E. Garmire, Appl. Phys. Lett. 35, 379 (1979).
J. He & M. Cada, IEEE J, Quant

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