Semiconductor devices and method of manufacturing them

Details Semiconductor devices and method of manufacturing them Semiconductor devices and method of manufacturing them

2011-05-03

2011-05-03

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S741000, C257S763000, C257S765000, C257S766000, C257SE29114, C438S652000, C438S656000, C438S660000, C438S685000

Reexamination Certificate

active

07936065

ABSTRACT:
A semiconductor device is provided with a silicon substrate, with a surface for soldering the silicon substrate to a ceramic substrate, and an electrode making contact with the surface of the silicon substrate. The electrode comprises a first conductor layer, a second conductor layer, and a third conductor layer. The first conductor layer makes contact with the surface of the silicon substrate and includes aluminum and silicon. The second conductor layer makes contact with the first conductor layer and includes titanium. The third conductor layer is separated from the first conductor layer by the second conductor layer and includes nickel.

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