Semiconductor devices and method, including TGZM, of making same

Details Semiconductor devices and method, including TGZM, of making same Semiconductor devices and method, including TGZM, of making same

1974-11-22

1976-09-21

Woiciechowicz, Edward J.

Metal treatment

Stock

Ferrous

357 48, 148 15, 357 89, 357 90, 357 91, H01L 2904, H01L 2704, H01L 700

Patent

active

039822699

ABSTRACT:
A homogeneous integrated power structure embodies solid state control or signal devices and power devices integrated monolithically to achieve optimum physical characteristics of each device embodied therein at economical cost of manufacturing the same. The devices are electrically isolated from each other by a P-N junction isolation grid produced by the thermomigration of metal-rich wires through a semiconductor substrate by thermal gradient zone melting processing techniques.

REFERENCES:
patent: 3602781 (1971-08-01), Hart

Affiliated with

Also associated with

Rating

Semiconductor devices and method, including TGZM, of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices and method, including TGZM, of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices and method, including TGZM, of making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1417520