Semiconductor devices and method for manufacturing the same

Details Semiconductor devices and method for manufacturing the same Semiconductor devices and method for manufacturing the same

2007-07-17

2007-07-17

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S097000, C257S103000, C257S310000

Reexamination Certificate

active

10868774

ABSTRACT:
In a field effect transistor, an Si layer11, an SiC (Si1−yCy) channel layer12, a CN gate insulating film13made of a carbon nitride layer (CN) and a gate electrode14are deposited in this order on an Si substrate10. The thickness of the SiC channel layer12is set to a value that is less than or equal to the critical thickness so that a dislocation due to a strain does not occur according to the carbon content. A source region15and a drain region16are formed on opposite sides of the SiC channel layer12, and a source electrode17and a drain electrode18are provided on the source region15and the drain region16, respectively.

REFERENCES:
patent: 5561302 (1996-10-01), Candelaria
patent: 6190975 (2001-02-01), Kubo et al.
patent: 6323525 (2001-11-01), Noguchi et al.
patent: 6472685 (2002-10-01), Takagi
patent: 494395 (1992-07-01), None
patent: 921575 (1999-06-01), None
patent: 04-247664 (1992-09-01), None
patent: 5-218014 (1993-08-01), None
patent: 07-321222 (1995-12-01), None
patent: 9-82944 (1997-03-01), None
patent: 10-214906 (1998-08-01), None
patent: 11-233771 (1999-08-01), None
patent: 2000-114257 (2000-04-01), None
patent: 2000-150512 (2000-05-01), None
patent: 2000-216163 (2000-08-01), None
patent: 2000-216392 (2000-08-01), None
patent: 2000-277514 (2000-10-01), None
patent: 2000-286413 (2000-10-01), None
patent: 2000-286418 (2000-10-01), None
patent: WO 00/60671 (2000-10-01), None
M. Togo et al., “Low-Leakage and Highly-Reliable 1.5 nm SiOn Gate-Dielectric Using Radical Oxynitridation for Sub-0.1 μm CMOS”, 2000 Symposium on VLSI Technology Digest of Tchnical Papers.

Affiliated with

Also associated with

Rating

Semiconductor devices and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3771429