Semiconductor devices and method for making the same

Details Semiconductor devices and method for making the same Semiconductor devices and method for making the same

1983-02-03

1990-11-06

James, Andrew J.

357 231, 357 41, 357 34, 357 35, H01L 2978

Patent

active

049690310

ABSTRACT:
A semiconductor device has an active layer in which a semiconductor element is formed by employing a silicon single crystal as a substrate. The present invention causes a tensile strain to remain in the active layer, thereby to improve the carrier mobility.

REFERENCES:
patent: 3566215 (1971-02-01), Heywang
patent: 3874936 (1975-04-01), d'Hervilly
patent: 3969753 (1976-07-01), Thorsen
IEDM Meeting Dec. 1981 by Tsaur, pp. 232-235.
Solid State Electronics, vol. 3, pp. 261-267 by Pfann 1961.

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