Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including isolation structure
Reexamination Certificate
2005-09-06
2005-09-06
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including isolation structure
C438S360000, C438S369000, C438S478000, C438S524000
Reexamination Certificate
active
06939773
ABSTRACT:
Semiconductor device fabrication methods include forming an oxide layer on a semiconductor substrate, forming an arrangement trench on the semiconductor substrate by patterning the oxide layer and the semiconductor substrate, forming a nitride layer on the arrangement trench and the oxide layer, forming a field trench on the semiconductor substrate by patterning the nitride layer, oxide layer, and the semiconductor substrate, and forming a pad oxide layer on inner walls of the field trench. The methods may also include removing the pad oxide layer on a bottom wall of the field trench, injecting ions into the bottom wall of the field trench so as to form an ion injected region, forming a buried layer by diffusing the ion injected region, and forming an epitaxial layer on the buried layer.
REFERENCES:
patent: 4887144 (1989-12-01), Cook et al.
patent: 5057443 (1991-10-01), Hutter
patent: 5250837 (1993-10-01), Sparks
patent: 6329265 (2001-12-01), Miyawaki et al.
patent: 6790713 (2004-09-01), Horch
Dang Trung
DongbuAnam Semiconductor Inc.
Hanley Flight & Zimmerman LLC
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