Semiconductor devices and manufacturing methods thereof

Details Semiconductor devices and manufacturing methods thereof Semiconductor devices and manufacturing methods thereof

2005-05-24

2005-05-24

Smith, Matthew (Department: 2825)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S239000, C257S296000, C257S308000, C257S908000

Reexamination Certificate

active

06897481

ABSTRACT:
Embodiments include semiconductor devices and methods of manufacture, one of which includes a capacitor unit formed on a silicon substrate. The capacitor unit is divided into a plurality of capacitor subunits which are partitioned from each other by a separating insulation layer. Each of the capacitor subunits includes a first electrode layer composed of an impurity diffusion layer formed in the silicon substrate, a second electrode layer composed of a conductive polysilicon layer and a dielectric layer composed of a silicon oxide layer interposed between the first electrode layer and the second electrode layer. The respective capacitor subunits are connected in parallel to each other through a connector.

REFERENCES:
patent: 5227323 (1993-07-01), Nishitsuji et al.
patent: 5817533 (1998-10-01), Sen et al.
patent: 5843817 (1998-12-01), Lee et al.
patent: 6359295 (2002-03-01), Lee et al.

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