Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1995-12-21
1999-09-14
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257188, 257190, 257614, 257627, H01L 3100, H01L 31072, H01L 31109, H01L 2922
Patent
active
059527030
ABSTRACT:
A semiconductor device having: a support substrate having an upper surface; a HgTe layer formed on the support substrate; and a HgCdTe layer directly formed on the HgTe layer. A semiconductor device of another type having: a support substrate having an exposed upper surface tilted from the (100) plane of a single crystal with a diamond structure by a certain angle, along a direction offset by an angle larger than 0.degree. and smaller compound semiconductor layer formed on the support substrate; and a group II-VI compound semiconductor layer formed on the group III-V compound semiconductor layer.
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Maruyama Kenji
Murakami Satoshi
Nishino Hironori
Okamoto Tohru
Saito Tetsuo
Fujitsu Limited
Saadat Mahshid
Wilson Allan R.
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