Semiconductor devices and manufacturing method thereof

Details Semiconductor devices and manufacturing method thereof Semiconductor devices and manufacturing method thereof

2006-12-01

2009-12-08

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S626000, C257S627000, C257S638000, C257SE21219, C257SE21260, C438S127000, C438S149000, C438S692000, C438S693000

Reexamination Certificate

active

07629672

ABSTRACT:
A semiconductor device is provided with a semiconductor substrate having circuit elements formed therein, and an insulating protective film formed on the semiconductor substrate. Hydroxyl groups (OH) are attached to a surface of the protective film. As a result, the contact angle between surface of the protective film and a water droplet is less than or equal to 40 degrees.

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Chinese Office Action dated Apr. 4, 2008.
Journal of Guangzhou University (Natural Science Edition), vol. 1. No. 6, p. 12-13, Nov. 2002.
Chinese Office Action dated Apr. 4, 2008.

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