Semiconductor devices and fabrication methods thereof

Details Semiconductor devices and fabrication methods thereof Semiconductor devices and fabrication methods thereof

2008-11-13

2010-11-30

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

C257SE23141

Reexamination Certificate

active

07843052

ABSTRACT:
Semiconductor devices are disclosed. In an embodiment, a plurality of second semiconductor dies formed with through-silicon vias are stacked on a first semiconductor die. The stack of the second semiconductor dies is encapsulated by an encapsulant. Redistribution layers are formed on one surface of the stack and are connected to the through-silicon vias. Solder balls are attached to the respective redistribution layers. In another embodiment, a plurality of second semiconductor dies formed with through-silicon vias are stacked on a first semiconductor die formed with through-silicon vias. Redistribution layers are formed on the back surface of the first semiconductor die. Solder balls are attached to the respective redistribution layers. Further disclosed are methods for fabricating the semiconductor devices.

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