Semiconductor devices and circuit arrangements including such de

Details Semiconductor devices and circuit arrangements including such de Semiconductor devices and circuit arrangements including such de

1977-11-28

1979-01-09

Wojciechowicz, Edward J.

357 34, 357 36, 357 45, 357 51, 357 53, H01L 2704

Patent

active

041341244

ABSTRACT:
A circuit arrangement is at least partially embodied in a collector-diffusion-isolation (CDI) type device, in a semiconductor body comprising a thin layer initially wholly of one conductivity type on a substrate of the same conductivity type, and the device has a plurality of CDI-type components, each CDI-type component with a combination of regions of the opposite conductivity type, comprising a buried layer at the interface between the thin layer and the substrate, and an isolation barrier for the component extending through the thin layer to contact the buried layer, the circuit arrangement being such that no constituent component of the device breaks down when a potential difference of up to substantially twice the breakdown potential of the outer P-N junction of each CDI-type component, and at least of 10 volts, is applied across the device. Usually the substrate of the body is at the most negative potential level associated with the device. In one circuit arrangement the most positive potential level associated with the device is applied to the emitter (in the forward mode) of a CDI bipolar transistor arranged to operate in the inverse mode. Alternatively, the most positive potential level is applied to one end of a novel, high-voltage breakdown CDI-type component comprising a resistor structure, the resistive material comprising an inner surface region of the opposite conductivity type, within a region of said one conductivity type of the thin layer and defined by the combination of regions. In another circuit arrangement, the most positive potential level is applied to a novel, high-voltage breakdown CDI-type component comprising a contact structure having a contact on a layer of passivating material and overlaying an inner surface region of the component as referred to above. In yet another circuit arrangement, the most positive potential level is applied to a novel, high-voltage breakdown CDI-type component having only one contact, the contact being provided on an inner surface region of the component as referred to above.

REFERENCES:
patent: 3971059 (1976-07-01), Dunkley et al.

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