Semiconductor devices and a solder for use in such devices

Details Semiconductor devices and a solder for use in such devices Semiconductor devices and a solder for use in such devices

1982-07-14

1985-03-12

James, Andrew J.

Metal fusion bonding

Process

Critical work component, temperature, or pressure

357 65, 357 71, 22826318, 420566, H01L 2948, H01L 2940, H01L 2946, H01L 2962

Patent

active

045048495

ABSTRACT:
A semiconductor device, for example a power rectifier, formed in a semiconductor body has a contact area coated with a metal layer of, for example, gold. A metallic member is soldered to the layer with an alloy comprising at least 80% lead, the balance being indium and silver in a ratio of at least 4:1 and at most 10:1. One such solder which has good wetting characteristics for improved bond strength contains approximately 92% lead, 7% indium, and 1% silver.

REFERENCES:
patent: 3771211 (1973-11-01), Postupack
patent: 3820152 (1974-06-01), Booth
patent: 3878442 (1975-04-01), Bhatt
patent: 3913120 (1975-10-01), Lahiri
patent: 3986255 (1976-10-01), Mandal
C. E. T. White et al., "Proforma on Preforms", Solid State Technology, (Sep. 1975) pp. 45-48.

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