Semiconductor devices and a process for producing the same

Details Semiconductor devices and a process for producing the same Semiconductor devices and a process for producing the same

1990-05-23

1991-07-02

Prenty, Mark

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 51, 357 59, 357 42, 357 71, 365182, H01L 2702, H01L 2904, H01L 2348, G11C 1134

Patent

active

050289756

ABSTRACT:
Disclosed is an MOSIC including a plurality of silicon gate type MOSFET's in which, after polycrystalline silicon wirings are formed simultaneously with polycrystalline silicon gates, the electrodes contacted with the source and drain regions are made of polycrystalline silicon so as to be connected to the polycrystalline silicon wirings, thereby to prevent the shallow pn junctions of the source and drain regions from being destroyed by the contacts and to provide a high degree of integration to one silicon chip.

REFERENCES:
patent: 4125854 (1978-11-01), McKenny
patent: 4198695 (1980-04-01), McElroy
patent: 4234889 (1980-11-01), Raymond et al.
patent: 4558343 (1985-12-01), Ariizumi et al.
IEEE Journal of Solid State Circuits, vol. 15, #2, pp. 201-205 by Ohzone et al., Apr. 1980.
Kang et al., "A 30 ns 16.times.1 Fully Static RAM", 1981, IEEE International Solid State Circuits Conference, pp. 18, 19 and 255, Feb. 18, 1981.

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