Metal treatment – Stock – Ferrous
Patent
1974-06-18
1976-03-09
James, Andrew J.
Metal treatment
Stock
Ferrous
357 13, 357 52, 357 91, 148 15, H01L 2948
Patent
active
039435520
ABSTRACT:
A semiconductor device comprising a semiconductor body portion having a shallow surface layer which is higher doped than the bulk of the semiconductor body portion, and a metal electrode on this layer and forming a Schottky barrier with the body portion. The layer serves to control the effective height of the barrier. The depth of the layer is such that the layer is substantially depleted of charge carriers in the zero bias condition whereby the slope of the reverse current-voltage characteristic of the barrier below break-down is determined by the doping of the bulk of the body portion substantially independently of the presence of the layer. Depending on the conductivity type of the layer relative to the bulk, the barrier can be higher or lower than that which would be formed in the absence of this layer. By providing the layer by implantation good control of the doping and hence of the barrier height can be obtained. Applicable to both discrete Schottky diodes and Schottky barriers in integrated circuits.
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G. Salmer et al., "Theoretical and Exp. Study of GaAs Impatt Osc. Eff.," J. Appl. Phys., Vol. 44 No. 1, Jan., 1973, pp. 314-324.
S. Sze, "Physics of Semiconductor Devices," Wiley-Interscience, 1969, pp. 37, 368-378.
Beale Julian Robert Anthony
Shannon John Martin
Clawson Jr. Joseph E.
James Andrew J.
Oisher Jack
Trifari Frank R.
U.S. Philips Corporation
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