Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2010-03-17
2011-10-11
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S520000, C257S587000, C257S588000, C438S432000, C438S667000
Reexamination Certificate
active
08035190
ABSTRACT:
A device comprises a first sub-collector formed in an upper portion of a substrate and a lower portion of a first epitaxial layer and a second sub-collector formed in an upper portion of the first epitaxial layer and a lower portion of a second epitaxial layer. The device further comprises a reach-through structure connecting the first and second sub-collectors and an N-well formed in a portion of the second epitaxial layer and in contact with the second sub-collector and the reach-through structure. The device further comprises N+ diffusion regions in contact with the N-well, a P+ diffusion region in contact with the N-well, and shallow trench isolation structures between the N+ and P+ diffusion regions.
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Liu Xuefeng
Rassel Robert M.
Voldman Steven H.
Canale Anthony
International Business Machines - Corporation
Le Dung A.
Roberts Mlotkowski Safran & Cole P.C.
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