Semiconductor devices

Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S355000, C257S501000

Reexamination Certificate

active

10013087

ABSTRACT:
The present invention provides a semiconductor device embracing (a) a first semiconductor region defined by a first end surface, a second end surface opposing to the first end surface and a side boundary surface connecting the first and second end surfaces; (b) a second semiconductor region connected with the first semiconductor region at the second end surface; (c) a third semiconductor region connected with the first semiconductor region at the first end surface; and (d) a fourth semiconductor region having inner surface in contact with the side boundary surface and an impurity concentration lower than the first semiconductor region. The fourth semiconductor region surrounds the first semiconductor region, and is disposed between the second and third semiconductor regions. The first, second and fourth semiconductor regions are first conductivity-type, but the third semiconductor region is a second conductivity type.

REFERENCES:
patent: 4258311 (1981-03-01), Tokuda et al.
patent: 4264857 (1981-04-01), Jambotkar
patent: 4293868 (1981-10-01), Iizuka et al.
patent: 4956690 (1990-09-01), Kato
patent: 6579772 (2003-06-01), Andoh
patent: 6639301 (2003-10-01), Andoh
patent: 2002/0070380 (2002-06-01), Andoh
patent: 2002/0072207 (2002-06-01), Andoh
patent: 2002/0127890 (2002-09-01), Andoh
patent: 1382730 (1975-02-01), None
patent: 48-35865 (1973-10-01), None
patent: 48-74171 (1973-10-01), None
patent: 50-48882 (1975-05-01), None
patent: 58-085572 (1983-05-01), None
patent: 10-294473 (1998-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3783696

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.