Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Reexamination Certificate
2005-04-05
2005-04-05
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
C257S529000, C257S530000
Reexamination Certificate
active
06876015
ABSTRACT:
A semiconductor device may include a fuse section110in which a plurality of fuses20to be fused by irradiation of a laser beam are formed. The fuses20are arranged at a pitch X, and an insulation layer36having a specified film thickness covers upper portions of the fuses20. The fuses20may have a width W and a film thickness T that have a relation indicated by the following equation: T≧0.4/W. Furthermore, the width W of the fuse20may be 3 μm or less, and may be less than ½ of the pitch X of the fuses20. Also, the film thickness of the fuse20may be 0.7 μm or less.
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Abraham Fetsum
Konrad Raynes & Victor LLP
Raynes Alan S.
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