Semiconductor devices

Details Semiconductor devices Semiconductor devices

1974-03-22

1976-02-03

Lovell, C.

Metal treatment

Compositions

Heat treating

29576R, 357 42, 357 91, H01L 754

Patent

active

RE0287040

ABSTRACT:
A method for making an IGFET is described. The method utilizes impurity ion implantation into the surface channel to determine the conductivity thereof. The advantages include special impurity profiles providing improved performance, better control over important parameters such as threshold voltage, the manufacture of improved tetrodes, and the manufacture of improved ICs using for example N- and P-channel devices, and depletion and enhancement devices combined in a single chip.

REFERENCES:
patent: 3328210 (1967-06-01), McCaldin et al.
patent: 3388009 (1968-06-01), King
patent: 3413531 (1968-11-01), Leith
patent: 3472712 (1969-10-01), Bower
patent: 3481030 (1969-12-01), Velde et al.
patent: 3515956 (1970-06-01), Martin et al.
Kellett et al., "High Energy Ion Implantation of Materials," AFCRL-66-367, May 1966, pp. 61-67.

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