Semiconductor devices

Details Semiconductor devices Semiconductor devices

1989-03-17

1990-02-27

James, Andrew J.

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 34, 372 44, 372 45, 372 46, 372 48, H01S 318

Patent

active

049050575

ABSTRACT:
A semiconductor device such as a semiconductor laser device or a transistor which is small in both threshold current and leakage current and exhibits no increase with time in the threshold current and leakage current can be obtained by incorporating pnp or npn junctions in a buried layer which coats an active region containing InGaAsP, forming the mid layer of the junctions with InGaAsP, adjusting the conductivity type of the mid layer with an implanted ion and specifying the energy band width of a semiconductor constituting the mid layer.

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"Semiconductor Devices . . . ", by S. M. Sze, 1985, p. 268.

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