Semiconductor devices

Details Semiconductor devices Semiconductor devices

1971-12-13

1976-07-13

Wojciechowicz, Edward J.

Metal treatment

Stock

Ferrous

357 23, 357 91, 148 15, 357 41, H01L 2980, H01L 2978, H01L 700, H01L 2702

Patent

active

039697444

ABSTRACT:
A semiconductor device is described containing at least two insulating gate field effect transistors in a common wafer. One of the transistors exhibits high gain but the other transistor exhibits low gain as a result of selectively implanting into its channel neutral ions and crystal damage which reduce the effective mobility of charge carriers therein. In one embodiment, the low gain transistor serves as a load for the high gain transistor. In a second embodiment, the low gain transistor is a parasitic transistor formed between adjacent circuit elements.

REFERENCES:
patent: 3341754 (1967-09-01), Kellett et al.
patent: 3515956 (1970-06-01), Martin et al.
patent: 3540925 (1970-11-01), Athanas et al.
patent: 3653978 (1972-04-01), Robinson et al.
patent: 3700981 (1972-10-01), Masuhara et al.

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