Semiconductor devices

Details Semiconductor devices Semiconductor devices

1976-12-01

1979-01-02

Miller, Jr., Stanley D.

357 16, 357 52, 357 61, 357 68, H01L 2714

Patent

active

041329996

ABSTRACT:
A semiconductor device comprises a substrate made of an alloy having the formula Cd.sub.x Hg.sub.1-x Te where x is a non-zero number less than 1. The substrate has P type conductivity and a doping agent such as mercury is diffused into the substrate to form a region of N type conductivity therein. Before diffusion of the mercury into the substrate, a protective layer of cadmium telluride CdTe is applied to the surface of the substrate and the doping agent is diffused into the substrate through the protective layer. The device finds application as a photovoltaic detector of infrared radiation.

REFERENCES:
patent: 3496024 (1970-02-01), Ruehrwein
patent: 3845494 (1974-10-01), Ameurlaine et al.
patent: 3949223 (1976-04-01), Schmit et al.

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