Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-07-23
1998-11-10
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257327, 257401, H01L 2906
Patent
active
058347933
ABSTRACT:
A semiconductor device has a semiconductor substrate, a source and a drain region, each formed at the surface of said semiconductor substrate, and each having a potential barrier with respect to the semiconductor substrate. A gate electrode is formed on the semiconductor substrate and positioned between the source and drain regions. The gate electrode controls the height of discrete energy levels of carriers of said semiconductor substrate, and provides a conduction state and a non-conduction state depending upon the existence or non-existence of resonant tunneling current flow.
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Kabushiki Kaisha Toshiba
Prenty Mark V.
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