Semiconductor devices

Fishing – trapping – and vermin destroying

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Details

437 40, 437229, 357 237, 148DIG106, H01L 21265

Patent

active

049686380

ABSTRACT:
A method of manufacture of thin film, field-effect transistors formed on a transparent substrate and with transparent, conductive source and drain electrodes, uses initially deposited gate electrodes as a mask in association with photolithographic processing using radiation transmitted through the substrate and electrodes to minimize parasitic capacitance between the gate and source and drain electrodes.

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