Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-07-18
2000-12-26
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257763, 257765, 257435, H01L 2904
Patent
active
061663964
ABSTRACT:
In an active matrix liquid crystal display (LCD) device, a conductor line interconnecting a drain of each thin-film transistor and a corresponding pixel electrode constructed with indium tin oxide (ITO) is formed in a three-layer structure in which an aluminum film is sandwiched between a pair of titanium films. This construction prevents poor contact and deterioration of reliability because electrical contact is established between one titanium film and semiconductor and between the other titanium film and ITO. The aluminum film has low resistance which is essential for ensuring high performance especially in large-screen LCDs.
REFERENCES:
patent: 4782380 (1988-11-01), Shankar et al.
patent: 5371398 (1994-12-01), Nishihara
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5641994 (1997-06-01), Bollinger et al.
Prenty Mark V.
Semiconductor Energy Laboratory Co,. Ltd.
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