Semiconductor devices

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357 4, 357 30, 427 87, 428901, B32B 702, H01L 2712

Patent

active

046457070

ABSTRACT:
A semiconductor device incorporating two superlattices in the GaAs/AlGaAs system separated by a relatively thick layer of GaAlAs is described. The device displays negative differential conductance.

REFERENCES:
patent: 4503447 (1985-03-01), Iafrate et al.
patent: 4511408 (1985-04-01), Holonyak, Jr.
patent: 4517047 (1985-05-01), Chang et al.
patent: 4558336 (1985-12-01), Chang et al.
patent: 4591889 (1986-05-01), Gossard et al.

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