Semiconductor device with Zener diode for gate protection, and m

Details Semiconductor device with Zener diode for gate protection, and m Semiconductor device with Zener diode for gate protection, and m

1996-07-30

1998-04-07

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Avalanche diode

257355, 257356, 257357, 257360, H01L 2362

Patent

active

057367795

ABSTRACT:
A semiconductor device has a Zener diode disposed between a gate and a source of a MOS type semiconductor device. The Zener diode is structured as N.sup.+ /P/P.sup.+ /P/N.sup.+. The P.sup.+ region functions as a channel stopper, and suppresses the occurrence of leakage current caused by an inversion of a surface of the low concentration P region. The adjustment of the width of the P.sup.+ region enables the controlling of a Zener voltage. The Zener diode protects the gate, and the arrangement enables the prevention of the occurrence of leakage current between the gate and the source.

REFERENCES:
patent: 5536958 (1996-07-01), Shen et al.

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