Semiconductor device with wiring layer

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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Details

257764, 257767, 257769, 257775, H01L 23532, H01L 2943

Patent

active

055023355

ABSTRACT:
The present invention relates to a semiconductor device which has a wiring system including a wiring formed by completely surrounding a periphery of isolation films with a metal conductor as a main wiring material as viewed in a cross sectional profile and a contact opening and a through hole opening where the main wiring material is buried and a manufacturing method thereof.

REFERENCES:
patent: 4800176 (1989-01-01), Kakumu et al.
patent: 4833519 (1989-05-01), Kawano et al.
patent: 4935804 (1990-06-01), Ito et al.
patent: 5254872 (1993-10-01), Yoda et al.

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