Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-06-05
2007-06-05
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE23043, C257SE23079, C257SE23077, C257SE23114, C257SE27046, C257SE23062, C257SE23075, C257SE23035, C257SE23031, C257SE23024, C257SE29198, C257S528000, C257S723000, C257S724000, C257S725000, C257S728000, C257S535000, C257S784000, C257S786000, C257S685000, C257S698000, C361S793000, C361S782000, C361S763000, C439S055000, C174S260000, C174S256000, C372S038020, C372S038100
Reexamination Certificate
active
10524894
ABSTRACT:
A semiconductor device (10) includes a semiconductor die (20) and an inductor (30, 50) formed with a bonding wire (80) attached to a top surface (21) of the semiconductor die. The bonding wire is extended laterally a distance (L30, L150) greater than its height (H30, H50) to define an insulating core (31, 57). In one embodiment, the inductor is extended beyond an edge (35, 39) of the semiconductor die to reduce loading.
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Anderson Harold
Carney Francis
Knapp James
Ngo Cang
Wen Yenting
Jackson Kevin B.
Semiconductor Components Industries L.L.C.
Stipanuk James J.
Williams Alexander Oscar
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