Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2006-08-22
2006-08-22
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S774000, C257S275000, C257S276000, C257S587000
Reexamination Certificate
active
07095114
ABSTRACT:
An amplifier GaAs MMIC for microwave band applications includes a ground electrode8having a via hole group12composed of three via holes11filled with plated metals10athat are formed adjacently. The interaction thereby generates high frequency electromagnetic bonding, which reduces the ground inductance. According to the MMIC, the ground inductance of the via hole may be reduced while decrease of a strength and increase of a size being restrained.
REFERENCES:
patent: 5202752 (1993-04-01), Honjo
patent: 5343071 (1994-08-01), Kazior et al.
patent: 5404581 (1995-04-01), Honjo
patent: 5488253 (1996-01-01), Matsuoka
patent: 5488256 (1996-01-01), Tsunoda
patent: 5528209 (1996-06-01), Macdonald et al.
patent: 5614743 (1997-03-01), Mochizuki
patent: 5818077 (1998-10-01), Takahashi et al.
patent: 5864169 (1999-01-01), Shimura et al.
patent: 6252266 (2001-06-01), Hoshi et al.
patent: 2001/0033210 (2001-10-01), Tanabe
patent: 2002/0015291 (2002-02-01), Kohjiro et al.
patent: 2002/0153534 (2002-10-01), Mochizuki et al.
patent: 3-286559 (1991-12-01), None
patent: 07240645 (1994-01-01), None
patent: 6-244437 (1994-09-01), None
patent: 7-135210 (1995-05-01), None
patent: 8-274116 (1996-10-01), None
patent: 8-279562 (1996-10-01), None
patent: 2000-138236 (2000-05-01), None
patent: 2001-60831 (2001-03-01), None
Peter Van Zant, Microchip Fabrication, 2000, McGraw-Hill, p. 398.
Matsumoto Nobuyuki
Motouchi Yoshinori
Shirakawa Kazuhiko
Takahashi Naoki
Birch, Stewart, Kolasch and Birch LLP
Lewis Monica
Sharp Kabushiki Kaisha
Wilczewski Mary
LandOfFree
Semiconductor device with via hole group generating high... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with via hole group generating high..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with via hole group generating high... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3699957