Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-02-27
2009-02-03
Lewis, Monica (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE21578
Reexamination Certificate
active
07485967
ABSTRACT:
A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a pad electrode formed on a semiconductor substrate through a first insulation layer, and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein the via hole includes a first opening of which a diameter in a portion close to the pad electrode is larger than a diameter in a portion close to the back surface of the semiconductor substrate, and a second opening formed in the first insulation layer and continuing from the first opening, of which a diameter in a portion close to the pad electrode is smaller than a diameter in a portion close to the front surface of the semiconductor substrate.
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Microchip Fabrication, Peter Van Zant, McGraw-Hill, Fourth Edition, pp. 402-403.
Kameyama Kojiro
Okayama Yoshio
Suzuki Akira
Umemoto Mitsuo
Lewis Monica
Morrison & Foerster / LLP
Sanyo Electric Co,. Ltd.
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