Semiconductor device with variable grid openings for controlling

Details Semiconductor device with variable grid openings for controlling Semiconductor device with variable grid openings for controlling

1977-08-05

1979-10-02

Wojciechowicz, Edward J.

357 38, 357 55, 357 86, H01L 2980

Patent

active

041700198

ABSTRACT:
A field terminated diode device includes contiguous anode, base, and cathode regions, which are respectively P+, N-, and N+ semiconductor material. The N- base region includes therein a grid region of P type semiconductor material. The grid region includes grid openings which define channels in the grid region for communicating charge carriers between the anode and cathode regions. Means are provided for electrically connecting to the anode and cathode regions and to the grid region. In one embodiment, the grid channels are nonuniform in that their average widths increase from the center to the perimeter of the device. In another embodiment, the nonuniform channels are distributed throughout the grid region.

REFERENCES:
patent: 3274461 (1966-09-01), Teszner
patent: 3657573 (1972-04-01), Maute

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