Semiconductor device with two series-connected complementary mis

Details Semiconductor device with two series-connected complementary mis Semiconductor device with two series-connected complementary mis

1994-07-29

1995-11-14

Wambach, Margaret Rose

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327534, 327566, 326 69, 326 73, H03K 17687

Patent

active

054670489

ABSTRACT:
A low-voltage driven semiconductor device is simple to fabricate, operates at high speed, and consumes low power. The semiconductor device is made of first and second MISFETs connected in series. The MISFETs have channels of the same conduction type. If the conduction type is n, the drain and gate of the first MISFET are connected to the high-potential side of a power source. The source and well of the second MISFET are connected to the low-potential side of the power source. The well of the first MISFET and the gate of the second MISFET are connected to a signal input terminal. A voltage applied to ends of the MISFETs and the potential fluctuation range of a signal supplied to the signal input terminal are each set to be lower than a voltage determined by a built-in potential (a forward withstand voltage) of a pn junction between a well of the first MISFET and a diffusion layer of the same. The diffusion layer is one that is adjacent to the second MISFET. No current will flow from the diffusion layer to the well because no forward voltage larger than the forward withstand voltage of the pn junction flows through the pn junction.

REFERENCES:
patent: 3702943 (1972-11-01), Heuner et al.
patent: 4259686 (1981-03-01), Suzuki et al.
patent: 4326136 (1982-04-01), Le Can et al.
patent: 4647798 (1987-03-01), Crafts et al.
patent: 5227675 (1993-07-01), Taguchi
patent: 5243228 (1993-09-01), Maruyama et al.
patent: 5381056 (1995-01-01), Murphy

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