Semiconductor device with two passivating layers

Details Semiconductor device with two passivating layers Semiconductor device with two passivating layers

1975-10-22

1977-12-13

Miller, Jr., Stanley D.

357 59, H01L 2904, H01L 2330

Patent

active

040632750

ABSTRACT:
A semiconductive device is provided which includes a single crystal substrate. A first insulating layer arranged on one surface of the substrate is of polycrystalline silicon containing oxygen. A second insulating layer formed on the first insulating layer is of polycrystalline silicon containing one of a group consisting of nitrogen, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and silicone resin. The substrate includes at least one PN junction which extends to the said surface of the substrate. A novel method of making is also disclosed.

REFERENCES:
patent: 3419746 (1968-12-01), Crowell et al.
patent: 3440477 (1969-04-01), Crowell et al.
patent: 3558348 (1971-01-01), Rand
patent: 3615913 (1971-10-01), Shaw
patent: 3649884 (1972-03-01), Haneta
patent: 3649886 (1972-03-01), Kooi
patent: 3878549 (1975-04-01), Yamazaki et al.
patent: 3900350 (1975-08-01), Appels et al.

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