Semiconductor device with trench type device isolation layer...

Details Semiconductor device with trench type device isolation layer... Semiconductor device with trench type device isolation layer...

2005-05-06

2009-08-25

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C438S221000, C438S296000, C438S359000, C257SE21546

Reexamination Certificate

active

07579664

ABSTRACT:
Disclosed are a semiconductor device with a device isolation structure and a method for fabricating the same. The method includes the steps of: forming a plurality of trenches defining first active regions by etching a substrate in a predetermined depth; forming a plurality of first device isolation layers in inner sides of the plurality of trenches; forming a plurality of second device isolation layers on the plurality of first device isolation layers as remaining a space opening an upper portion of each first active region disposed between the second device isolation layers; and forming a plurality of second active regions connected to the first active region between the second device isolation layers.

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patent: 10-2004-0059394 (2004-05-01), None
patent: 10-2006-0000581 (2006-06-01), None

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