Semiconductor device with trench structure

Details Semiconductor device with trench structure Semiconductor device with trench structure

2006-09-28

2010-11-23

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

C257S347000, C257S517000

Reexamination Certificate

active

07838909

ABSTRACT:
A semiconductor device includes a common diffusion structure formed in each region of a substrate in which semiconductor components are formed. The diffusion structures are separated into sections by trenches to form semiconductor components. The trenches define sizes of the semiconductor components and isolate the semiconductor components from the surrounding area.

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Office Action dated Feb. 15, 2008 in corresponding Japanese Patent Application No. 2002-263028 (and English translation).
Office Action dated Jul. 1, 2008 in corresponding Japanese Patent Application No. 2002-263028 (and English translation).
Office Action dated Oct. 2, 2007 in corresponding Japanese patent application No. 2002-263028 (and English translation).

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