Semiconductor device with trench isolation structure and fabrica

Details Semiconductor device with trench isolation structure and fabrica Semiconductor device with trench isolation structure and fabrica

1998-06-16

1999-07-27

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257513, 257640, H01L 2900

Patent

active

059295040

ABSTRACT:
A semiconductor device with the trench isolation structure is provided, in which the leakage current problem does not occur. This device is comprised of a semiconductor substrate, an isolation trench formed in a surface region of the substrate and filled with first and second isolation dielectrics, an interlayer dielectric layer formed on the surface region of the substrate to cover the isolation trench, and a conductive layer formed on the interlayer dielectric layer to be overlapped with the isolation trench. The interlayer dielectric layer has a contact hole located near the isolation trench. The contact hole is formed by etching. The conductive layer is contacted with and electrically connected to a region of the substrate through the contact hole of the interlayer dielectric layer. The first isolation dielectric serves as a primary insulator. The second isolation dielectric serves as a secondary insulator. The first isolation dielectric has a pair of depressions, each having one side contiguous with one of the pair of top corners of the isolation trench. The pair of depressions of the first isolation dielectric are filled with the second isolation dielectric. The second dielectric is lower in etch rate than that of the first dielectric in the process for forming the contact hole.

REFERENCES:
patent: 4471525 (1984-09-01), Sasaki
patent: 4863562 (1989-09-01), Bryant et al.
patent: 5358891 (1994-10-01), Tsang et al.
patent: 5567635 (1996-10-01), Acovic et al.
patent: 5661072 (1997-08-01), Jeng
patent: 5742095 (1998-04-01), Bryant et al.
patent: 5770484 (1998-06-01), Kleinhenz
patent: 5822425 (1998-09-01), Yindeepol et al.

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