Semiconductor device with trench isolation structure and...

Details Semiconductor device with trench isolation structure and... Semiconductor device with trench isolation structure and...

2007-02-06

2010-11-16

Luu, Chuong Anh (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S506000, C257S501000, C257S513000

Reexamination Certificate

active

07834415

ABSTRACT:
A semiconductor device has: a substrate provided with a trench; and a device isolation structure formed in the trench. The device isolation structure has: a silicon oxynitride film formed on a surface of the substrate through an interfacial oxide film; and an embedded insulating film formed on the silicon oxynitride film.

REFERENCES:
patent: 5686329 (1997-11-01), Chang et al.
patent: 5763315 (1998-06-01), Benedict et al.
patent: 7190036 (2007-03-01), Ko et al.
patent: 2005-322859 (2005-11-01), None

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