Semiconductor device with trench isolation structure

Details Semiconductor device with trench isolation structure Semiconductor device with trench isolation structure

2011-03-08

2011-03-08

Fulk, Steven J (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C438S435000, C257SE21546

Reexamination Certificate

active

07902628

ABSTRACT:
The present invention relates to a semiconductor device with a device isolation structure and a method for fabricating the same. The semiconductor device includes: a substrate provided with a trench formed in the substrate; and at least one device isolation structure including an oxide layer formed on the trench, a nitride layer formed on the oxide layer disposed on sidewalls of the trench and a high density plasma oxide layer formed on the nitride layer to fill the trench.

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