Semiconductor device with trench isolation

Details Semiconductor device with trench isolation Semiconductor device with trench isolation

2006-03-29

2009-02-24

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S513000

Reexamination Certificate

active

07495308

ABSTRACT:
A semiconductor device includes a semiconductor substrate including a plurality of trenches formed along a first direction and a plurality of first upper surfaces divided by the trenches, a plurality of element isolation insulating films embedded in the respective trenches and including a plurality of second upper surfaces continuous with the first upper surfaces in a second direction which is perpendicular to the first direction, respectively, a plurality of interlayer insulating films formed above the first and the second upper surfaces, and a plurality of contact plugs defined in the interlayer insulating films so as to connect with the first upper surfaces of the semiconductor substrate. Each first upper surface is inclined in the second direction so as to be lowered from a central part toward interfaces between each first upper surface and the second upper surfaces adjacent to each first upper surface.

REFERENCES:
patent: 2005/0156238 (2005-07-01), Wen et al.
patent: 2004-356428 (2004-12-01), None

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