Static information storage and retrieval – Read only systems – Semiconductive
Reexamination Certificate
2009-02-25
2011-11-01
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Read only systems
Semiconductive
C365S096000, C365S225700, C327S525000
Reexamination Certificate
active
08050077
ABSTRACT:
A transistor-based fuse structure is realized in a semiconductor device having a semiconductor substrate, transistor devices formed on the semiconductor substrate, and the transistor-based fuse structure formed on the semiconductor substrate. The transistor-based fuse structure includes a plurality of transistor-based fuses, and the method begins by selecting, from the plurality of transistor-based fuses, a first target fuse to be programmed for operation in a low-resistance/high-current state, the first target fuse having a first source, a first gate, a first drain, and a first gate insulator layer between the first gate and the semiconductor substrate. The method applies a first set of program voltages to the first source, the first gate, and the first drain to cause breakdown of the first gate insulator layer such that current can flow from the first source to the first gate through the first gate insulator layer, and from the first gate to the first drain through the first gate insulator layer.
REFERENCES:
patent: 5672994 (1997-09-01), Au et al.
patent: 7529148 (2009-05-01), Shah et al.
Buller James F.
Li Ruigang
Wu David Donggang
Zhou Jingrong
Advanced Micro Devices , Inc.
Hur J. H.
Ingrassia Fisher & Lorenz P.C.
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