Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-06-28
2011-06-28
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000
Reexamination Certificate
active
07968889
ABSTRACT:
The present invention provides a semiconductor device having a high breakdown voltage and high reliability even if a gate electrode is formed to be thin. The present invention is a semiconductor device including a polycrystal semiconductor layer, a gate insulating film, and a gate electrode, stacked on an insulating substrate in this order, wherein the polycrystal semiconductor layer has a surface roughness of 9 nm or less, the gate insulating film has a multilayer structure including a silicon oxide film on the polycrystal semiconductor layer side and a film containing a material with a dielectric constant higher than a dielectric constant of silicon oxide on the gate electrode side.
REFERENCES:
patent: 6677222 (2004-01-01), Mishima et al.
patent: 2002/0047169 (2002-04-01), Kunikiyo
patent: 2003/0080100 (2003-05-01), Yamazaki et al.
patent: 2003/0137621 (2003-07-01), Zhang et al.
patent: 2005/0250308 (2005-11-01), Yamaguchi et al.
patent: 09-252136 (1997-09-01), None
patent: 2000-133634 (2000-05-01), None
patent: 2001-060551 (2001-03-01), None
patent: 2001-127302 (2001-05-01), None
patent: 2002-076336 (2002-03-01), None
patent: 2002-343976 (2002-11-01), None
patent: 2003-178996 (2003-06-01), None
patent: 2005-057042 (2005-03-01), None
patent: 2005-285827 (2005-10-01), None
International Search Report for PCT/JP2006/314552 mailed Sep. 12, 2006.
Dickey Thomas L
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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