Semiconductor device with thermally compensating SiO.sub.2 -sili

Details Semiconductor device with thermally compensating SiO.sub.2 -sili Semiconductor device with thermally compensating SiO.sub.2 -sili

1978-06-14

1980-09-23

Miller, Jr., Stanley D.

357 16, 357 49, 357 52, 357 60, 357 71, H01L 2934

Patent

active

042246369

ABSTRACT:
A semiconductor device comprising a semiconductor substrate and protective films formed thereon. The protective films comprise at least one silicon carbide film which may be pure or may contain particular impurities.

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