Semiconductor device with temperature sensor

Details Semiconductor device with temperature sensor Semiconductor device with temperature sensor

2007-12-11

2007-12-11

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

C257S370000, C257S414000, C257S469000, C257SE27008, C257SE27015

Reexamination Certificate

active

11240853

ABSTRACT:
A semiconductor device is disclosed. In one embodiment the semiconductor device includes a semiconductor body of which is integrated a temperature sensor for measuring the temperature prevailing in the semiconductor body. The temperature sensor has a MOS transistor and a bipolar transistor. The MOS transistor is integrated into the semiconductor body nd configured such that the substhreshold current intensity of the MOS transistor is proportional to the temperature to be measured. The subthreshold current of the MOS transistor is amplified by the bipolar transistor.

REFERENCES:
patent: 5045909 (1991-09-01), Lucek et al.
patent: 5679972 (1997-10-01), Kim
patent: 6255892 (2001-07-01), Gartner et al.
patent: 6323531 (2001-11-01), Sander et al.
patent: 6468825 (2002-10-01), Machida et al.
patent: 6835994 (2004-12-01), Kistner et al.
patent: 2003/0020131 (2003-01-01), Asam et al.
Streetman/Banerjee, Solid State Electronic Devices, 2000, Prentice Hall, Fifth Edition, pp. 301 & 302.

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