Semiconductor device with temperature detecting diode, method of

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature

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257469, 257341, 257470, 257551, H01L 2358

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active

058698787

ABSTRACT:
The object of the present invention is to provide a temperature detecting method wherein a temperature detecting diode is formed in the proximity of and thermally coupled to an object of temperature detection element in the form of a semiconductor element so that, even when a high power is instantaneously applied, the temperature of the object element for temperature detection can be detected with a high degree of accuracy. According to the present invention, in a temperature detecting method for detecting, in a semiconductor device which includes an object element for temperature detection in the form of a semiconductor element and a temperature detecting diode formed in the proximity of the object element for temperature detection, the temperature of the object of temperature detection element from the ambient temperature and heat generated by the element, the temperature detecting diode is formed on the same pellet as that of the element at a position at which more than one half of the circumference thereof is surrounded by the object element for temperature detection.

REFERENCES:
patent: 5389813 (1995-02-01), Schwob
Japanese Office Action, 3 pages, Jul. 22, 1996, English translation.
Japanese Office Action, May 26, 1998, 2 pages, with English translation.

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