Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Reexamination Certificate
2006-04-11
2006-04-11
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
C257S565000
Reexamination Certificate
active
07026705
ABSTRACT:
A semiconductor device has a surge protection circuit electrically connected to a signal input terminal and including a diode and a transistor. The diode has its cathode region constituted of an n+diffusion layer, an n−epitaxial layer, an n-type diffusion layer and an n+diffusion layer. The n+diffusion layer is electrically connected to a conductive layer and formed at a main surface of a semiconductor substrate. The n+diffusion layer constitutes, together with a p-type diffusion layer, a pn junction where Zener breakdown occurs, and the pn junction with the Zener breakdown occurring therein is distant from a field oxide film. Then, the semiconductor device with the surge protection circuit without suffering from current leakage and thus normally operating can be achieved.
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Wolf, “Silicon Processing for the VLSI Era, vol. 2—Process Integration,” 1990, Lattice Press, p. 12-13.
Uenishi Akio
Yamamoto Fumitoshi
Flynn Nathan J.
McDermott Will & Emery LLP
Quinto Kevin
Renesas Technology Corp.
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