Semiconductor device with surface-inactivated layer

Details Semiconductor device with surface-inactivated layer Semiconductor device with surface-inactivated layer

1995-03-02

1996-07-30

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With means to increase breakdown voltage

257199, 257339, 257488, 257493, 257603, 257631, H01L 2358

Patent

active

055414265

ABSTRACT:
A semiconductor device is provided with a surface-inactivated semiconductor layer provided on the surface of a compound semiconductor on which surface a semiconductor layer forming the depletion layer is provided, the semiconductor layer forming the depletion layer being of a conduction type opposite that of the compound semiconductor, and having a carrier density and thickness being capable of forming a depletion layer on the compound semiconductor. When a depletion layer is formed on the surface of the compound semiconductor by the semiconductor layer forming the depletion layer, the depletion layer has no charge so that the concentration of electrical fields is relaxed, the surface of the semiconductor is stabilized, and excellent dielectric breakdown performance is obtained.

REFERENCES:
patent: 4626879 (1986-12-01), Colak
patent: 5144380 (1992-09-01), Kimoto et al.

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