Semiconductor device with stress control film utilizing film...

Details Semiconductor device with stress control film utilizing film... Semiconductor device with stress control film utilizing film...

2011-05-24

2011-05-24

Ho, Hoang-Quan T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S369000, C257SE27064

Reexamination Certificate

active

07948063

ABSTRACT:
Semiconductor devices required forming a stress control film to handle different stresses on each side when optimizing the stress on the respective P channel and N channel sections. A unique feature of the semiconductor device of this invention is that P and N channel stress are respectively optimized by making use of a stress control film jointly for the P and N channels that conveys stress in different directions by utilizing the film thickness.

REFERENCES:
patent: 2003/0040158 (2003-02-01), Saitoh
patent: 2004/0075148 (2004-04-01), Kumagai et al.
patent: 2005/0093078 (2005-05-01), Chan et al.
patent: 2006/0006420 (2006-01-01), Goto
patent: 2006/0157795 (2006-07-01), Chen et al.
patent: 2006/0214241 (2006-09-01), Pidin
patent: 2006/0246672 (2006-11-01), Chen et al.
patent: 2007/0259533 (2007-11-01), Ahn et al.
patent: 2005-57301 (2005-03-01), None
patent: 02/43151 (2002-05-01), None

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