Semiconductor device with strained InGaAs layer

Details Semiconductor device with strained InGaAs layer Semiconductor device with strained InGaAs layer

1986-09-19

1989-05-02

James, Andrew J.

357 16, 357 55, 357 61, H01L 2980

Patent

active

048273201

ABSTRACT:
A strained In.sub.y Ga.sub.l-y As layer is employed in a GaAs/Al.sub.x Ga.sub.l-x As transistor. Since the bandgap of In.sub.y Ga.sub.l-y As is much smaller than that of GaAs, there is no need for a troublesome large-mole-fraction of aluminum in the Al.sub.x Ga.sub.l-x As layer in order to maintain a large bandgap discontinuity. This and other advantages of the structure set forth result in devices having improved operating characteristics.

REFERENCES:
H. Temkin et al., 1.5-1.6 .mu.m Ga.sub.0.47 In.sub.0.53 As/Al.sub.0.48 In.sub.0.52 As Multiquautram Well Lasers Grown by Molecular Beam Epitaxy, Appl. Phys. Lett. 42(10), May 15, 1983, pp. 845-847.
Zipperian et al., "A GaAs/In.sub.0.25 Ga.sub.0.75 As/GaAs Modulation-Doped, Single, Strained Quantum-Well FET", Inst. Phys. Conf. Ser. No. 79, Chapt. 8, 1985, pp. 421-425.
Rosenberg et al., "An In.sub.0.15 Ga.sub.0.85 As/GaAs Pseudomorphic Single Quantum Well HEMT,"IEEE Electron Device Letters, vol. ED2-6, No. 10, Oct. 1985, pp. 491-493.
Tsang, "Ga.sub.0.47 In.sub.0.53 As/InP Multiquantum Well Heterostructure Lasers Grown by Molecular Beam Epitaxy Operative at 1.53 .mu.m," Appl. Phys. Lett. 44(3), Feb. 1, 1984, pp. 288-289.

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