Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-03-28
2010-12-07
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S019000, C257S020000, C257SE29193
Reexamination Certificate
active
07847281
ABSTRACT:
A first film made of SiGe is formed over a support substrate whose surface layer is made of Si. A gate electrode is formed over a partial area of the first film, and source and drain regions are formed in the surface layer of the support substrate on both sides of the gate electrode. The gate electrode and source and drain regions constitute a first field effect transistor. A first stressor internally containing compressive strain or tensile strain is formed over the first film on both sides of the gate electrode of the first field effect transistor. The first stressor forms strain in a channel region.
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Search Report dated Nov. 1, 2005 issued in corresponding International Application No. PCT/JP2005/017839.
Translation of the Written Opinion of the International Searching Authority issued in corresponding International Application No. PCT/JP2005/017839.
I. Aberg et al., “High Electron and Hole Mobility Enhancements in Thin-Body Strained Si/Strained SiGe/Strained Si Heterostructures in Insulator” IEDM Technical Digest, pp. 173-176, Dec. 2004.
Mimura Takashi
Yamada Atsushi
Duong Khanh B
Fujitsu Limited
Fujitsu Patent Center
Smith Zandra
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